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1

Determination of Hg activity in Hg0.8Cd0.2Te liquid and solid solutions by a quasi-closed-space method

V. V. Bogoboyashchyy, K. R. Kurbanov

Journal:

Inorganic Materials

Year:

2005

Language:

english

File:

PDF, 112 KB

english, 2005

2

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Type conductivity conversion in p-CdxHg1-xTe

Berchenko, Nicolas N., Bogoboyashchyy, V. V., Izhnin, Igor I., Kurbanov, Kurban R., Vlasov, Andrii P., Yudenkov, V. A., Rutkowski, Jaroslaw, Rogalski, Antoni

Year:

2012

Language:

english

File:

PDF, 284 KB

english, 2012

3

SPIE Proceedings [SPIE Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics - Kiev, Ukraine (Wednesday 22 May 2002)] Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics - Defect structure and diffusion of defects in narrow-gap Hg1-xCdxTe crystals

Bogoboyashchyy, V. V., Sizov, Fiodor F., Gumenjuk-Sichevska, Johanna V., Kostyukevych, Sergey A.

Year:

2003

Language:

english

File:

PDF, 298 KB

english, 2003

4

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Relaxation of electrical properties of epitaxial CdxHg1-xTe:As(Sb) layers converted into n-type by ion milling

Izhnin, I. I., Bogoboyashchyy, V. V., Vlasov, A. P., Mynbaev, K. D., Pociask, M., Filachev, Anatoly M., Ponomarenko, Vladimir P., Dirochka, Alexander I.

Year:

2012

Language:

english

File:

PDF, 1.02 MB

english, 2012

5

Mechanisms of conductivity conversion in extrinsically and intrinsically doped p-HgCdTe solid solutions under low energy ion beam milling

I.I. Izhnin, V.V. Bogoboyashchyy, N.N. Berchenko, V.A. Yudenkov

Journal:

Journal of Alloys and Compounds

Year:

2004

Language:

english

File:

PDF, 72 KB

english, 2004

6

Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal

V. V. Bogoboyashchyy, I. I. Izhnin, M. Pociask, K. D. Mynbaev, V. I. Ivanov-Omskiĭ

Journal:

Year:

2007

Language:

english

File:

PDF, 254 KB

english, 2007

7

Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors

Bogoboyashchyy, V V, Izhnin, I I, Mynbaev, K D, Pociask, M, Vlasov, A P

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

8

Conversion of conductivity type in Cu-doped Hg0.8Cd0.2Te crystals under ion beam milling

V. V. Bogoboyashchyy, A. I. Elizarov, I. I. Izhnin

Year:

2005

Language:

english

File:

PDF, 182 KB

english, 2005

9

The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

Bogoboyashchyy, V V, Izhnin, I I, Mynbaev, K D

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 243 KB

english, 2006

10

SPIE Proceedings [SPIE Congress on Optics and Optoelectronics - Warsaw, Poland (Sunday 28 August 2005)] Infrared Photoelectronics - Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Izhnin, Ihor, Rogalski, Antoni, Dereniak, Eustace L., Bogoboyashchyy, Viktor, Sizov, Fiodor, Sizov, Fiodor F.

Year:

2005

Language:

english

File:

PDF, 235 KB

english, 2005

11

SPIE Proceedings [SPIE Congress on Optics and Optoelectronics - Warsaw, Poland (Sunday 28 August 2005)] Infrared Photoelectronics - Type conductivity conversion in MOCVD Cd x Hg 1-x Te/GaAs hetero-structures under ion milling

Izhnin, Ihor, Rogalski, Antoni, Dereniak, Eustace L., Bogoboyashchyy, Victor, Kotkov, Anatoliy, Sizov, Fiodor F., Moiseev, Alexsandr, Grishnova, Natalya

Year:

2005

Language:

english

File:

PDF, 172 KB

english, 2005

12

SPIE Proceedings [SPIE Optics & Photonics 2005 - San Diego, California, USA (Sunday 31 July 2005)] Infrared and Photoelectronic Imagers and Detector Devices - Electrical characteristics relaxation of ion milled MCT layers

Izhnin, I. I., Longshore, Randolph E., Bogoboyashchyy, V. V., Sizov, F. F.

Year:

2005

Language:

english

File:

PDF, 794 KB

english, 2005

13

High temperature arsenic doping of CdHgTe epitaxial layers

A. Vlasov, V. Bogoboyashchyy, O. Bonchyk, A. Barcz

Journal:

Crystal Research and Technology

Year:

2004

Language:

english

File:

PDF, 248 KB

english, 2004

14

Reaction constants for main cationic native defects in narrow-gap Hg1−xCdxTe crystals

V.V. Bogoboyashchyy, K.R. Kurbanov

Journal:

Journal of Alloys and Compounds

Year:

2004

Language:

english

File:

PDF, 86 KB

english, 2004

15

Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling

V. V. Bogoboyashchyy, S. A. Dvoretsky, I. I. Izhnin, N. N. Mikhailov, Yu. G. Sidorov, F. F. Sizov, V. S. Varavin, V. A. Yudenkov

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 124 KB

english, 2004

16

Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

E. Belas, V. V. Bogoboyashchyy, R. Grill, I. I. Izhnin, A. P. Vlasov, V. A. Yudenkov

Journal:

Journal of Electronic Materials

Year:

2003

Language:

english

File:

PDF, 112 KB

english, 2003

17

SPIE Proceedings [SPIE Congress on Optics and Optoelectronics - Warsaw, Poland (Sunday 28 August 2005)] Infrared Photoelectronics - Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg 0.79 Cd 0.21 Te single crystals

Kurbanov, Kurban, Rogalski, Antoni, Dereniak, Eustace L., Bogoboyashchyy, Viktor, Izhnin, Ihor, Sizov, Fiodor F.

Year:

2005

Language:

english

File:

PDF, 122 KB

english, 2005

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